MRF1518T1 Datasheet, PDF (9/16 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR

Z_o = 10 Ω
520 ^Zin
520
f = 450 MHz
f = 450 MHz _ZOL*
f = 470 MHz
Z_in
Z_OL*
400
f = 470 MHz
135
400
Z_OL*
f = 175 MHz
175
Z_in
f = 135 MHz
Z_o = 10 Ω
V_DD = 12.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
450
4.9 +j2.85 6.42 +j3.23
470 4.85 +j3.71 4.59 +j3.61
500 4.63 +j3.84 4.72 +j3.12
520 3.52 +j3.92 3.81 +j3.27
V_DD = 12.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
400 4.28 +j2.36 4.41 +j0.67
440 6.45 +j5.13 4.14 +j2.53
470 5.91 +j3.34 3.92 +j4.02
V_DD = 12.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
135
18.31 –j0.76 8.97 +j2.62
155
17.72 +j1.85 9.69 +j2.81
175
18.06 +j5.23 7.94 +j1.14
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 82 pF capacitor in
series with gate. (See Figure 1).
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 47 pF capacitor in
series with gate. (See Figure 10).
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 43 pF capacitor in
series with gate. (See Figure 19).
Z_OL* = Complex conjugate of the load
Z_OL* = Complex conjugate of the load
impedance at given output power,
impedance at given output power,
voltage, frequency, and η_D > 50 %.
voltage, frequency, and η_D > 50 %.
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Note: Z_OL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 28. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF1518T1
9