MRF284 Datasheet, PDF (7/12 Pages) Motorola, Inc – RF Power Field-Effect Transistors

TYPICAL CHARACTERISTICS
11
45
GAIN
10
40
9
8 ^{Pout = 30 Watts (PEP)}
VDD = 26 Vdc, IDQ = 200 mA
7 ^{Two–Tone}
Frequency Delta = 100 kHz
6
5
η
35
30
–32
3.0
IMD
–36
2.0
4
VSWR
3
1920
1940
1960
1980
f, FREQUENCY (MHz)
–40
1.0
2000
Figure 12. 1.92–2.0 GHz Broadband Circuit Performance
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
0
50
100
150
200
250
TJ, JUNCTION TEMPERATURE (°C)
This graph displays calculated MTBF in hours x ampere2 drain current.
Life tests at elevated temperature have correlated to better than ±10%
of the theoretical prediction for metal failure. Divide MTBF factor by ID2
for MTBF in a particular application.
Figure 13. MTBF Factor versus Junction Temperature
MOTOROLA RF DEVICE DATA
MRF284 MRF284S
7