MRF19045R3 Datasheet, PDF(7/12 Page) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

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MRF19045R3 Datasheet, PDF (7/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

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f = 1930 MHz

ZOL*

f = 1990 MHz

Zin

f = 1990 MHz

f = 1930 MHz

Zo = 25 â¦

VDD = 26 V, IDQ = 550 mA, Pout = 9 W Avg., 2ÄCarrier N-CDMA

Zin

MHz

â¦

ZOL*

â¦

1930

15.52 + j16.5

4.52 + j1.86

1960

14.24 + j14.44

3.85 + j1.04

1990

11.11 + j13.01

3.44 + j0.69

Zin = Complex conjugate of the optimum source

impedance.

ZOL* = Complex conjugate of the optimum load

impedance at a given output power, voltage,

IMD, bias current and frequency.

Note 1: ZOL* was chosen based on tradeoffs between gain, output

power, drain efficiency and intermodulation distortion.

Note 2: Measurements were taken on the MRF19045 2Äcarrier

NÄCDMA test circuit, with SMA Launchers.

Input

Matching

Network

Device

Under Test

Output

Matching

Network

Z in

Z OL*

Figure 15. Series Equivalent Input and Output Impedance

MOTOROLA RF DEVICE DATA

MRF19045R3 MRF19045SR3

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