MJE18206 Datasheet, PDF (7/12 Pages) Motorola, Inc – POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

TYPICAL STATIC CHARACTERISTICS
MJE18206 MJF18206
10
1.0
TC ≤ 125°C
GAIN ≥ 5
8
LC = 4 mH
0.8
6
0.6
SECOND
BREAKDOWN
DERATING
4
2
–5 V
0V
0
–1.5 V
400
600
800
1000
1200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 18. Reverse Bias Switching Safe
Operating Area
0.4
0.2
THERMAL
DERATING
0
20 40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 19. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 17 is based
on TC = 25°C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 17 may be found at any case temperature by using
the appropriate curve on Figure 19.
TJ(pk) may be calculated from the data in Figures 22 and
23. At any case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction
reverse biased. The safe level is specified as a reverse–
biased safe operating area (Figure 18). This rating is verified
under clamped conditions so that the device is never
subjected to an avalanche mode.
TYPICAL SWITCHING CHARACTERISTICS
(IB1 = IB2 FOR ALL CURVES)
VCE
dyn 1 µs
0V
dyn 3 µs
90% IB
1 µs
IB
3 µs
TIME
Figure 20. Dynamic Saturation
Voltage Measurements
10
9
IC
8
7
6
5 ^Vclamp
4
3
IB
2
1
0
0
1
tsi
10% Vclamp
90% IB1
2
3
4
TIME
90% IC
tfi
10% IC
tc
5
6
7
8
Figure 21. Inductive Switching Measurements
Motorola Bipolar Power Transistor Device Data
7