MCM64PC32T Datasheet, PDF (7/16 Pages) Motorola, Inc – 256K/512K Pipelined BurstRAM Secondary Cache Module for Pentium

DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TJ = 20 to + 110°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages referenced to VSS = 0 V)
Parameter
Symbol
Min
Supply Voltage (Operating Voltage Range)
VDD
3.135
Input High Voltage
VIH
2.0
Input Low Voltage
VIL
– 0.5
NOTES:
1. JEDEC specification 8–1A specifies ± 0.3 V tolerance for VDD.
2. VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 1.4 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.
3. VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns) for I ≤ 20.0 mA.
Max
3.6
VDD + 0.3
0.8
Unit Notes
V
1
V
2
V
3
DC CHARACTERISTICS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VDD3)
Output Leakage Current (CG = VIH)
TTL Output Low Voltage (IOL = + 8.0 mA)
TTL Output High Voltage (IOH = – 4.0 mA)
NOTES:
1. Champing diodes exist to VSS and VDD.
Symbol
Min
Ilkg(I)
—
Ilkg(O)
—
VOL
—
VOH
2.4
Max
± 1.0
± 1.0
0.4
—
Unit Notes
µA
µA
V
1
V
1
POWER SUPPLY CURRENTS
Parameter
AC Supply Current (CG = VIH, CCS = VIL, Iout = 0 mA, All Inputs = VIL or VIH,
VIL = 0.0 V and VIH ≥ 3.0 V, Cycle Time ≥ tKHKH min)
AC Standby Current (CG = VIH, CCS = VIL, Iout = 0 mA, All Inputs = VIL or VIH,
VIL = 0.0 V and VIH ≥ 3.0 V, Cycle Time ≥ tKHKH min)
Symbol
Max
Unit
MCM64PC32T IDDA
MCM64PC64T
495
mA
705
MCM64PC32T
MCM64PC64T
ISB1
230
mA
505
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TJ = 20 to 110°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Max
Unit
Input Capacitance
MCM64PC32T Cin
MCM64PC64T
21
pF
31
Input/Output Capacitance (DQ0 – DQ63)
MCM64PC32T
MCM64PC64T
CI/O
8
pF
16
MOTOROLA FAST SRAM
MCM64PC32T•MCM64PC64T
7