MRF5S21150 Datasheet, PDF (6/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
30
V_DD = 28 Vdc, I_DQ = 1300 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz
25 _{@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB}
@ 0.01% Probability (CCDF)
20
η
15
G_ps
10
−25
−30
IM3
−35
ACPR
−40
−45
5
−50
0
1
10
P_out, OUTPUT POWER (WATTS) AVG. (W−CDMA)
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
−55
100
−20
3.84 MHz
−30
Channel BW
−40
−50
−60
−70
−80
−90
−100 _{−IM3 @}
−ACPR @ +ACPR @
3.84 MHz BW 3.84 MHz BW
−110 ^{3.84 MHz BW}
−120
−25 −20 −15 −10 −5 0 5 10
+IM3 @
3.84 MHz BW
15 20 25
f, FREQUENCY (MHz)
Figure 9. 2-Carrier W-CDMA Spectrum
100
10
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
10⁹
10⁸
10⁷
10⁶
100
120
140
160
180
200 220
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTBF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by I_D2 for MTBF in a particular application.
Figure 11. MTBF Factor versus Junction Temperature
MRF5S21150R3 MRF5S21150SR3
MOTOROLA RF DEVICE DATA
6
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