MJ10007 Datasheet, PDF (6/8 Pages) Motorola, Inc – 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS

MJ10007
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
20
10
100 µs
1.0 ms
5.0
5.0
2.0
dc
ms
1.0
TC = 25°C
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED
0.2
SECOND BREAKDOWN LIMITED
0.1
0.05
0.02
4.0
MJ10007
6.0 10
20
40 60 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10 µs
350
400
Figure 11. Forward Bias Safe Operating Area
10
TURN OFF LOAD LINE
BOUNDARY FOR MJ10007
8 THE LOCUS FOR MJ10006
IS 50 V LESS
6
v TJ 100°C
4
2
VBE(off) = 5 V
VBE(off) = 2 V
VBE(off) = 0 V
0
0
100
200
300
400
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Reverse Bias Switching
Safe Operating Area
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as VCEX(sus) at a given collector current
and represents a voltage–current condition that can be sus-
tained during reverse biased turn–off. This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode. Figure 12 gives the complete
reverse bias safe operating area characteristics.
100
SECOND BREAKDOWN
80
DERATING
60
40
THERMAL DERATING
20
0
0
40
80
120
160
200
TC, CASE TEMPERATURE (°C)
Figure 13. Power Derating
6
Motorola Bipolar Power Transistor Device Data