MRFG35010MT1 Datasheet, PDF (5/8 Pages) Motorola, Inc – Gallium Arsenide PHEMT

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
0
0
IRL
−10
−10
−20
V_DS = 12 Vdc, I_DQ = 180 mA
f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA
−20
Γ_S = 0.898é−134.03_, Γ_L = 0.828é−140.67_
−30
−30
−40
−40
ACPR
−50
−50
−60
0.1
1
P_out, OUTPUT POWER (WATTS)
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
−60
10
12.5
60
V_DS = 12 Vdc, I_DQ = 180 mA
12
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
50
Γ_S = 0.898é−134.03_, Γ_L = 0.828é−140.67_
11.5
40
PAE
11
30
G_T
10.5
20
10
10
9.5
0
0.1
1
10
P_out, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE: All data is referenced to package lead interface. Γ_S and Γ_L are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MOTOROLA RF DEVICE DATA
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MRFG35010MT1
5