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MRF5S19130R3 Datasheet, PDF (5/12 Pages) Motorola, Inc – N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
15
40
14
35
13 Gps
30
12 η
11
10 IRL
9
25
VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA 20
2âCarrier NâCDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
â10
â5
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) â20
â10
8 IM3
â30
â15
7
ACPR
6
â40
â20
â50
â25
5
â60
â30
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
16
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
TwoâTone Measurement, 2.5 MHz Tone Spacing
15
IDQ = 1800 mA
14
1500 mA
13 1200 mA
12 900 mA
11
600 mA
10
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
â20
â25
â30 3rd Order
â35
â40 5th Order
â45
7th Order
â50
â55
â60
0.1
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
TwoâTone Measurements, Center Frequency = 1960 MHz
1
10
TWOâTONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
â25
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
â30 TwoâTone Measurement, 2.5 MHz Tone Spacing
â35
IDQ = 1800 mA
â40
600 mA
â45
â50
1500 mA
1200 mA
â55
900 mA
â60
1
10
100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
60
59
Ideal
58
57
P3dB = 53.11 dBm (205.57 W)
56
55
P1dB = 52.54 dBm (179.61 W)
54
53
Actual
52
51
50
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 µsec (on), 1 msec (off)
49
48
Center Frequency = 1960 MHz
35 36 37 38 39 40 41 42 43 44 45
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S19130R3 MRF5S19130SR3
For More Information On This Product,
5
Go to: www.freescale.com
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