MGY20N120D Datasheet, PDF (5/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MGY20N120D
40
100
30
TJ = 125°C
20
TJ = 25°C
10
0
0
1
2
3
4
5
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Reverse Biased
Safe Operating Area
1.0
D = 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E–05
1.0E–04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
R_θJC(t) = r(t) R_θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
1.0E+00
1.0E+01
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5