MCM69Q618 Datasheet, PDF (5/12 Pages) Motorola, Inc – 64K x 18 Bit Synchronous Separate I/O SRAM

ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VDD
– 0.5 to + 4.6
V
Voltage Relative to VSS for Any Pin
Except VDD
Vin, Vout – 0.5 to VDD + 0.5 V
Output Current
Iout
± 20
mA
Power Dissipation
PD
TBD
W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This is a synchronous device. All synchro-
nous inputs must meet specified setup and hold
times with stable logic levels for ALL rising
edges of clock (K) while the device is selected.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
PACKAGE THERMAL CHARACTERISTICS (See Note 1)
Rating
Symbol
TQFP
Unit
Notes
Junction to Ambient (@ 200 lfm)
Single Layer Board
Four Layer Board
R_θJA
40
°C/W
2
25
Junction to Board (Bottom)
R_θJB
17
°C/W
3
Junction to Case (Top)
R_θJC
9
°C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
MOTOROLA FAST SRAM
MCM69Q618
5