MCM20014 Datasheet, PDF (46/54 Pages) Motorola, Inc – 1/3” Color VGA Digital Image Sensor

POWER DISSIPATION (VDD = 3.0V, VDD referenced to VSS; Ta = 25°C)
Symbol
Parameter
Condition
Typ
Unit
P_DYN
Dynamic Power
13.5 MHz MCLK Clock frequency
400
mW
P_STDBY
Standby Power
STDBY Pin Logic High
50
mW
P_AVG
Average Power
13.5 MHz Operation (using STDBY)
200
mW
MCM20014 MONOCHROME CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS
Symbol
Parameter
Typ
Unit
Notes
E_sat
Saturation Exposure
0.14
µJ/cm²
1
QE
Peak Quantum Efficiency (@550nm)
18
%
2
PRNU
Photoresponse Non-uniformity
12
% pk-pk
3
Notes:
1.For λ = 550 nm wavelength.
2.Refer to typical values from Figure 3, MCM20014 nominal spectral response.
3.For a 100 x 100 pixel region under uniform illumination with output signal equal to 80% of saturation signal.
MCM20014 COLOR CMOS IMAGE SENSOR ELECTRO-OPTICAL CHARACTERISTICS
Symbol
Parameter
Typ
Unit
E_sat
Saturation Exposure
0.3
µJ/cm²
QE_r
Red Peak Quantum Efficiency @ λ = 650 nm
12
%
QE_g Green Peak Quantum Efficiency @ λ = 550 nm
11
%
QE_b
Blue Peak Quantum Efficiency @ λ = 450 nm
8
%
Notes:
1.For λ = 550 nm wavelength.
2.Refer to typical values from Figure 3, MCM20014 nominal spectral response.
Notes
1
2
2
2
CMOS IMAGE SENSOR CHARACTERISTICS
Symbol
Parameter
Typ
Unit
Notes
Sensitivity
3.0
V/lux-sec
I_d
Photodiode Dark Current
0.2
nA/cm²
DSNU
Dark Signal Non-Uniformity (Entire Field)
0.4
% rms
CTE
Pixel Charge Transfer Efficiency
0.9995
%
1
f_H
Horizontal Imager Frequency
11.5
MHz
4
X_ab
Blooming Margin - shuttered light
200
2,3
Notes:
1. Transfer efficiency of photosite
2. X_ab represents the increase above the saturation-irradiance level (H_sat) that the device can be exposed to before blooming of the pixel will
occur.
3. No column streaking
4. At 30fps VGA
MOTOROLA
46
MCM20014