MRF857 Datasheet, PDF (4/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

TYPICAL CHARACTERISTICS
15
4
Gpe
14.5
3.5
14
3
VCC = 24 Vdc
13.5
IC = 300 mA
2.5
Pout = 2.1 W (CW)
13
2
12.5
1.5
VSWR
12
1
830 840 850 860 870 880 890 900 910
f, FREQUENCY (MHz)
Figure 2. Performance of MRF857S in
Broadband Circuit
4
16
3.5
15
Pout
3
14
2.5
VCC = 24 Vdc
13
IC = 300 mA
2
Gpe
f = 870 MHz
12
1.5
11
1
10
0.5
9
0
8
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
Pin, INPUT POWER (WATTS)
Figure 3. MRF857S Output Power & Power Gain
versus Input Power
1500
Tj = 150°C
Tf = 50°C
1000
500
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
VCE (Vdc)
Figure 4. MRF857S DC SOA
850
800
Tj = 175°C
Tf = 50°C
750
700
650
600
550
50
0 ^{0 2 4 6 8 10 12 14 16 18 20 22 24 26 28}
VCE (Vdc)
Figure 5. MRF857S DC SOA
(This device is MTBF limited for VCE < 20 Vdc.)
1.00E+08
1.00E+07
1.00E+06
1.00E+05
1.00E+04
9.80E+06
2.01E+06
4.82E+05
1.32E+05
4.03E+04
1.37E+04
5.05E+03
1.00E+03
2.02E+03
8.67E+02
1.00E+02
100 120 140 160 180 200 220 240 260
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. MRF857S MTBF Factor versus
Junction Temperature
MRF857S
4
MOTOROLA RF DEVICE DATA