MRF650 Datasheet, PDF (4/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

R1, R2, R3, R4
B1
L1
(440 – 512 MHz)
L2
B3
+12.5 Vdc
C2 C3
TL4
C5
TL11
C7
C10
B2
C11
C13
D.U.T. _{TL8 TL9 TL10}
TL12
TL13 C12 TL14
TL1 C1 TL2
TL3
TL5 TL6 TL7
N2
N1
C4
C6
C8
C9
B1, B2 — Ferrite Bead Fair Rite Products Corp.
B3 — Ferrite Bead Fair Rite Products Corp.
C2, C11 — 820 pF, 5%
C3, C10 — 91 pF, 5%, Mica, SAHA 3HS0006–91
C1, C12 — 220 pF, 5%, Murata Erie
C4 — 9.1 pF, 5%, Murata Erie
C5, C6, C7, C8 — 43 pF, 5%, Mica SAHA 3HS0006–43
C9 — 10 pF, 5%, Murata Erie
C13 — 10 µF, Electrolytic, 50 V, Panasonic
L1 — 7 Turns, 24 AWG, ID Dia. 0.116″
L2 — 5 Turns, 18 AWG, ID Dia. 0.165″
N1, N2 — SMA Flange Mount, Omni–Spectra
2052–1618–02
R1, R2, R3, R4 — 39 Ohm 1/8 W 5% Rohm
TL1 — Zo = 50 Ohm
TL2 — Zo = 50 Ohm
TL3 — Zo = 50 Ohm
TL4 — See Photomaster
TL5 — Zo = 50 Ohm
TL6 — See Photomaster
TL7 — See Photomaster
TL8 — See Photomaster
TL9 — See Photomaster
TL10 — Zo = 50 Ohm
TL11 — See Photomaster
TL12 — Zo = 50 Ohm
TL13 — Zo = 50 Ohm
TL14 — Zo = 50 Ohm
Board Material: 1/16″ G10, ε_r = 4.5
Board Material: 2 oz. Cu Clad Both Sides
Figure 7. Schematic of Broadband Demonstration Amplifier (3)
PERFORMANCE CHARACTERISTICS OF
BROADBAND DEMONSTRATION AMPLIFIER
100
90
f = 400
80
M47H0zMHz
70
512 MHz
60
50
40
30
20
10
VCC = 12.5 Vdc
0
0
5
10 15
20 25 30
35 40
Pin, INPUT POWER (WATTS)
Figure 8. Output Power versus Input Power
80
Pin = 15 W
70
Po
VCC = 12.5 V
60
50
η_c
80
40
70
30
60
20
2.0:1
10
VSWR
1.5:1
0
1.0:1
430 440 450 460 470 480 490 500 510 520 530
f, FREQUENCY (MHz)
Figure 9. Po, η_c and VSWR versus Frequency
(3) Detailed design and performance information available from Motorola upon request.
MRF650
4
MOTOROLA RF DEVICE DATA