MRF21030LR3 Datasheet, PDF (4/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
60
−5
50
−10
IRL
40
−15
η
30 _{VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA}
−20
Two−Tone Measurement, 100 kHz Tone Spacing
20
G_ps
−25
10
−30
IMD
0
−35
2080 2100 2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
30
−20
V_DD = 28 Vdc, I_DQ = 250 mA, f = 2140 MHz
25 Channel Spacing (Channel Bandwidth):
−30
4.096 MHz (5 MHz)
20
−40
ACPR
15
−50
G_ps
η
10
−60
5
−70
0
1
2
3
4
5
6
P_out, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−25
V_DD = 28 Vdc, f = 2140 MHz
−30 ^{Two−Tone Measurement,}
100 kHz Tone Spacing
−35
200 mA
−40
250 mA
−45
400 mA
300 mA
−50
350 mA
−55
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
16
400 mA
15
350 mA
300 mA
250 mA
14
200 mA
V_DD = 28 Vdc, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
13
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
−20
V_DD = 28 Vdc, I_DQ = 250 mA, f = 2140 MHz
Two−Tone Measurement,
−30 _{100 kHz Tone Spacing}
3rd Order
−40
−50
5th Order
−60
7th Order
−70
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
−22
−24
14.5
−26
G_ps
−28
14
−30
IMD
−32
13.5
13
20
P_out = 30 W (PEP)
I_DQ = 250 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
22
24
26
28
30
32
V_DD, DRAIN VOLTAGE (VOLTS)
−34
−36
−38
34
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF21030LR3 MRF21030LSR3
4
MOTOROLA RF DEVICE DATA
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