MRF19030LR3 Datasheet, PDF (4/8 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
50
−10
IRL
40
−15
η
30 _{VDD = 26 Vdc}
−20
I_DQ = 300 mA, P_out = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
20
−25
G_ps
10
−30
IMD
0
−35
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
45
V_DD = 26 Vdc
40 _{IDQ = 350 mA, f = 1960 MHz, Channel Spacing}
(Channel Bandwidth): 885 kHz (30 kHz),
35 _{1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)}
30
2.25 MHz
25 _{885 kHz}
η
20 1.25 MHz
15
G_ps
10
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32
5
0
2
4
6
8
10
P_out, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−20
−30
−40
−50
−60
−70
−80
−90
−100
12
−25
V_DD = 26 Vdc, f = 1960 MHz
−30 ^{Two−Tone Measurement,}
100 kHz Tone Spacing
−35
200 mA
−40
300 mA
400 mA
−45
350 mA
−50
300 mA
−55
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
15
14 _{400 mA}
350 mA
300 mA
13
300 mA
200 mA
12
V_DD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
11
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
−20
V_DD = 26 Vdc, I_DQ = 300 mA, f = 1960 MHz
−30 ^{Two−Tone Measurement,}
100 kHz Tone Spacing
−40
3rd Order
−50
5th Order
7th Order
−60
−70
−80
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
14
−22
f = 1960 MHz
I_DQ = 300 mA, P_out = 30 W (PEP)
−24
Two−Tone Measurement, 100 kHz Tone Spacing
13.5
−26
G_ps
−28
13
−30
IMD
−32
12.5
−34
−36
12
−38
20
22
24
26
28
30
32
34
V_DD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF19030LR3 MRF19030LSR3
4
MOTOROLA RF DEVICE DATA
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