MRF160 Datasheet, PDF (4/8 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FET

Typical Characteristics
6
6
f = 400 MHz
5
VDS = 28 Vdc
5
IDQ = 50 mA
4
4
Pin = 250 mW
3
f = 500 MHz
3
2
2
150 mW
50 mW
f = 400 MHz
1
VDS = 13.5 Vdc
1
IDQ = 50 mA
f = 400 MHz
IDQ = 50 mA
0
0
0
50
100
150
800
250
12 14 16 18 20 22 24 26 28
PIN, INPUT POWER (mW)
VDS, SUPPLY VOLTAGE (VOLTS)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Voltage
40
35
30
Typical Device Shown
VDD = 28 V
25
IDQ = 100 mA
VGS(th) = 3 V
20
15
10
f = 400 MHz
5
0
–10 –8 –6 –4 –2 0 2 4 6 8 10
VDS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Gate Voltage
4
3.5
3
VDS = 28 V
2.5
IDQ = 50 mA
Pin = Constant
2
1.5
f = 400 MHz
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 5. Output Power versus Gate Voltage
32
10
28
f = 1.0 MHz
VGS = 0 V
24
20
1
16
12
Coss
0.1
8
Ciss
4
Crss
0
0
0
4
8
12
16
20
24
28
0
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus Drain–Source Voltage
1
10
100
VDS, DRAIN VOLTAGE (VOLTS)
Figure 7. DC Safe Operating Area
MRF160
4
MOTOROLA RF DEVICE DATA