MRF141G Datasheet, PDF (4/6 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

TYPICAL CHARACTERISTICS
2000
2000
VDS = 20 V
Coss
10 V
Ciss
1000
200
Crss
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPS)
NOTE: Data shown applies to each half of MRF141G.
Figure 4. Common Source Unity Gain Frequency
versus Drain Current
30
25
20
15
VDD = 28 V
10
IDQ = 2 x 250 mA
Pout = 300 W
5
2
5
10
30
f, FREQUENCY (MHz)
100
200
Figure 6. Power Gain versus Frequency
20
0
5
10
15
20
25
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
NOTE: Data shown applies to each half of MRF141G.
Figure 5. Capacitance versus
Drain–Source Voltage
400
350
f = 175 MHz
Pin = 30 W
300
IDQ = 250 mA x 2
20 W
250
10 W
200
150
100
50
0
12
14
16
18
20
22
24
26 28
SUPPLY VOLTAGE (VOLTS)
Figure 7. Output Power versus Supply Voltage
MRF141G
4
150
f = 175 MHz
125
INPUT, Zin
(GATE TO GATE)
100
125 ¹⁵⁰
100
f = 175 MHz
30
30
OUTPUT, ZOL*
(DRAIN TO DRAIN)
Zo = 10 Ω
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
Figure 8. Input and Output Impedances
MOTOROLA RF DEVICE DATA