MGY25N120 Datasheet, PDF (4/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor

MGY25N120
6
IC = 25 A
5.5
5
VCC = 720 V
VGE = 15 V
4.5
TJ = 125°C
IC = 25 A
4
15 A
3.5
3
10 A
2.5
2
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Switching Losses versus
Gate Resistance
7
VCC = 720 V
6 ^{VGE = 15 V}
RG = 20 Ω
5 ^{TJ = 125°C}
4
3
2
1
0
0
5
10
15
20
25
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
Figure 9. Turn–Off Losses versus
Collector–to–Emitter Current
100
7
VCC = 720 V
6 ^{VGE = 15 V}
RG = 20 Ω
5
4
IC = 25 A
3
15 A
2
10 A
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 8. Total Switching Losses versus
Case Temperature
50
40
30
TJ = 125°C
TJ = 25°C
20
10
0
0
1
2
3
4
5
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Reverse Biased
Safe Operating Area
4
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