MGSF3441VT1 Datasheet, PDF (4/6 Pages) Motorola, Inc – TMOS Single P-channel Field Effect Transistors

MGSF3441VT1
20
10
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 150°C
TJ = 25°C
0.30
ID = 3.3 A
0.24
0.18
0.12
0.06
1.0
0
0.25
0.50
0.75
1.00
1.25 1.50
VSD, SOURCE–TO–DRAIN VOLTAGE (V)
Figure 7. Source–Drain Diode Forward Voltage
0
0
2.0
4.0
6.0
8.0
VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 8. On–Resistance versus
Gate–to–Source Voltage
0.4
0.3
0.2
0.1
ID = 250 mA
0
–0.1
–0.2
–50 –25
0 25 50 75 100 125 150
TJ, TEMPERATURE (°C)
Figure 9. Threshold Voltage
20
16
12
8.0
4.0
0
0.01
0.1
1.0
10
TIME (sec)
Figure 10. Single Pulse Power
2.0
1.0
DUTY CYCLE = 0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.0001
SINGLE PULSE
NOTES:
PDM
t1
t2
1. DUTY CYCLE, D = t1/t2
2. PER UNIT BASE =
RthJA = 62.5°C/W
3. TJM – TA = PDMZthJA(t)
4. SURFACE MOUNTED
0.001
0.01
0.1
1.0
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
10
30
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data