BDX33B Datasheet, PDF (4/6 Pages) Motorola, Inc – Darlington Complementary Silicon Power Transistors

BDX33B BDX33C BDX34B BDX34C
NPN
BDX33B, 33C
PNP
BDX34B, 34C
20,000
10,000
VCE = 4.0 V
20,000
10,000
VCE = 4.0 V
5000 ^{TJ = 150°C}
3000
2000
25°C
1000
– 55°C
500
5000 _{TJ = 150°C}
3000
2000
25°C
1000
– 55°C
500
300
200
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
300
200
0.1
Figure 5. DC Current Gain
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
3.0
2.6
IC = 2.0 A 4.0 A
6.0 A
2.2
TJ = 25°C
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
1.0
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 6. Collector Saturation Region
20 30
3.0
TJ = 25°C
2.5
3.0
TJ = 25°C
2.5
2.0
2.0
1.5 ^{VBE(sat) @ IC/IB = 250}
1.5 ^{VBE @ VCE = 4.0 V}
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
1.0 ^{VBE(sat) @ IC/IB = 250}
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 7. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data