PZTA64T1 Datasheet, PDF (3/6 Pages) Motorola, Inc – PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.3
TA = 125°C
25°C
– 55°C
0.5 0.7 1.0
VCE = 2.0 V
5.0 V
PZTA64T1
10 V
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
50 70 100
200 300
10
VCE = 5.0 V
f = 100 MHz
4.0
3.0
TA = 25°C
2.0
1.0
0.4
0.2
0.1
1.0 2.0
5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
500 1K
Figure 2. High Frequency Current Gain
2.0
1.6
TA = 25°C
VBE(sat) @ IC/IB = 100
1.2
0.8 ^{VCE(sat) @ IC/IB = 1000}
VBE(on) @ VCE = 5.0 V
IC/IB = 100
0.4
0
0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltage
2.0
1.8
TA = 25°C
1.6 IC = 10 mA 50 mA 100 mA 175 mA
1.4
300 mA
1.2
1.0
0.8
0.6
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50 100 200 500 1K 2K
IB, BASE CURRENT (µA)
5K 10K
Figure 4. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3