PBF493 Datasheet, PDF (3/4 Pages) Motorola, Inc – High Voltage Transistors

150
100
70
50
30
20
15
–1.0
TJ = +125°C
+25°C
–55°C
PBF493 PBF493S
VCE = –10 Vdc
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50
–80 –100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
50
Cib
20
10
5.0
2.0
1.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
Ccb
–50 –100–200 –500 –1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
–1.0
–0.8
VBE @ VCE = –10 V
–0.6
–0.4
–0.2
VCE(sat) @ IC/IB = 10 mA
0
–1.0 –2.0
–5.0 –10
–20
–50 –100
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
100
80 ^{TJ = 25°C}
VCE = –20 Vdc
60
40
30
20
0
–1.0 –2.0
–5.0 –10 –20
–50 –100
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
–500
100 µs
1.0 ms
–200
1.0 s
–100
–50
1.5 WATT THERMAL
LIMITATION @ TC = 25°C
625 mW THERMAL
–20 _{LIMITATION @ TA = 25°C}
PBF493S
PBF493
–10
–5.0
–3.0
BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 150°C
–5.0 –10
–20 –30 –50
–100 –200 –300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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