MTW10N100E Datasheet, PDF (3/8 Pages) Motorola, Inc – TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTW10N100E
20
18 ^{TJ = 25°C}
16
VGS = 10 V
6V
14
12
10
5V
8
6
4
2
4V
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
20
18 ^{VDS ≥ 10 V}
16
14
12
10
8
25°C
6
4
100°C
TJ = –55°C
2
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
VGS = 10 V
2.0
TJ = 100°C
1.6
1.2
25°C
0.8
– 55°C
0.4
0
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1.56
TJ = 25°C
1.48
1.40
1.32
1.24
VGS = 10 V
1.16
15 V
1.08
1.00
0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.8
VGS = 10 V
2.4 ID = 5 A
2.0
1.6
1.2
0.8
0.4
0
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100000
10000
VGS = 0 V
1000
TJ = 125°C
100°C
100
25°C
10
1
0 100 200 300 400 500 600 700 800 900 1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3