MTP50N06VL Datasheet, PDF (3/8 Pages) Motorola, Inc – TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TYPICAL ELECTRICAL CHARACTERISTICS
MTP50N06VL
90
TJ = 25°C
80
VGS = 10 V
5V
70
8V
60
7V
6V
4V
50
40
30
20
3V
10
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
90
80 ^{VDS ≥ 10 V}
70
60
TJ = –55°C
25°C
100°C
50
40
30
20
10
0
0
1
2
3
4
5
6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.06
VGS = 5 V
0.05
0.04
TJ = 100°C
0.03
25°C
0.02
– 55°C
0.01
0
0 9 18 27 36 45 54 63 72 81 90
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
0.04
TJ = 25°C
0.035
0.03
0.025
0.02
VGS = 5 V
10 V
0.015
0.01
0.005
0
0 10 20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2
1.8 ^{VGS = 5 V}
ID = 21 A
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
– 50 – 25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
TJ = 125°C
100
100°C
10
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3