MTD6P10E Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

12
TJ = 25°C
10
VGS = 10 V
8
TYPICAL ELECTRICAL CHARACTERISTICS
12
VDS ≥ 10 V
9V
10
8V
8
MTD6P10E
TJ = – 55°C
25°C
100°C
6
6
7V
4
4
2
6V
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2
0
2
34
5
6
7
8
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.3
1.2 ^{VGS = 10 V}
1.1
1.0
0.9
TJ = 100°C
0.8
0.7
25°C
0.6
0.5
– 55°C
0.4
0.3
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1.0
TJ = 25°C
0.9
0.8
0.7
VGS = 10 V
0.6
0.5
15 V
0.4
0
2
4
6
8
10
12
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
VGS = 10 V
1.6 ID = 3 A
1.4
1.2
1.0
0.8
0.6
0.4
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
VGS = 0 V
TJ = 125°C
10
– 120 – 100 – 80
– 60
– 40
– 20
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3