MTD5N25E Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM

10
TJ = 25°C
8
6
4
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
9V
8V
7V
10
VDS ≥ 10 V
8
6
6V
4
MTD5N25E
TJ = –55°C
25°C
100°C
2
5V
0
0 2 4 6 8 10 12 14 16 18
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
2
0
2
3
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
3.5
VGS = 10 V
3.0
2.5
2.0
TJ = 100°C
1.5
25°C
1.0
– 55°C
0.5
0
0 1 2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
1.7
TJ = 25°C
1.5
1.3
VGS = 10 V
1.1
15 V
0.9
0.7
0 1 2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 2.5 A
2.0
1.5
1.0
0.5
0
–50 –25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
100
VGS = 0 V
10
TJ = 125°C
100°C
25°C
1
0
50
100
150
200
250
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3