MRF557 Datasheet, PDF (3/6 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

16
80
14
70
12
η_c
60
10
Gpe
50
8
5 40
6
10 30
4
IRL
2
15 20
20 10
0
0
800
820
840
860
880
900
f, FREQUENCY (MHz)
Figure 2. Performance in Broadband Circuit
Zin
Ohms
ZOL*
Ohms
f
Frequency
MHz
806
VCC = 7.5 V
Pin = 300 mW
2.4 + j3.9
VCC = 12.5 V
Pin = 200 mW
2.4 + j3.1
VCC = 7.5 V
Pout 806 MHz = 1.7 W
Pout 870 MHz = 1.4 W
Pout 960 MHz = 1.0 W
14.7 – j4.4
VCC = 12.5 V
Pout 806 MHz = 2.1 W
Pout 870 MHz = 1.8 W
Pout 960 MHz = 1.1 W
13.6 – j12.8
870
2.5 + j4.6
2.7 + j3.7
17.2 – j8.6
16 – j13.2
960
6.1 + j7.4
6.8 + j8.3
40 – j8.3
38 – j10.5
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power
MOTOROLA RF DEVICE DATA
MRF557
3