MRF429 Datasheet, PDF (3/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

250
f = 30 MHz
200 ^{ICQ = 150 mA}
150
100
VCC = 50 V
40 V
28 V
250
f = 30, 30.001 MHz
200
ICQ = 150 mA
IMD = d3
150
100
IMD = – 30 dB
– 35 dB
50
50
0
0
2
4
6
8
10
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
0
20
30
40
50
60
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Power versus Supply Voltage
30
350
f = 30.000 MHz
25
300
ICQ = 150 mA
VCC = 50 V
20
250
15
VCC = 50 V
200
TC = 50°C
ICQ = 150 mA
10
Pout = 150 W
150
100°C
0
1
2
4
7
15
30
60 100 ¹⁰⁰ 1
3 5 10
30 50
f, FREQUENCY (MHz)
OUTPUT VSWR
Figure 4. Power Gain versus Frequency
Figure 5. RF Safe Operating Area (SOAR)
250
200
150
100
50
0
0
VCC = 30 V
15 V
5
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. fT versus Collector Current
– 25
– 30
– 35
d3
d5
– 40
VCC = 50 V
f = 30, 30.001 MHz
– 45
– 50
14
0
20 40 60 80 100 120 140 160
Pout, OUTPUT POWER (WATTS PEP)
Figure 7. IMD versus Pout
MOTOROLA RF DEVICE DATA
MRF429
3