MMDJ3P03BJT Datasheet, PDF (3/4 Pages) Motorola, Inc – DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

1000
150°C
25°C
100
–55°C
10
VCE = 2 V
1.0
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
1.0
VBE(sat)
MMDJ3P03BJT
0.1
VCE(sat)
IC/IB = 125
0.01
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 2. “ON” Voltages
1.00
1000
IC = 0.8 A
IC = 1.2 A
0.75
0.50
100
0.25
IC = 0.5 A
0
1.0
10
100
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10
0.1
Cob
1.0
10
100
VR, REVERSE BIAS (V)
Figure 4. Capacitance
10
1.0 _{D = 0.5}
0.2
0.1
0.1 _0.05
0.02
0.01 _0.01
0.001
0.00001
SINGLE PULSE
0.0001
0.001
CHIP
JUNCTION
q NORMALIZED TO ja AT 10 s
0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W
0.0253 F 0.1406 F 0.5064 F 2.9468 F
177.14 F
AMBIENT
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
100
1000
Figure 5. Thermal Response
Motorola Bipolar Power Transistor Device Data
3