MJD47 Datasheet, PDF (3/6 Pages) Motorola, Inc – NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

200
100
TJ = 150°C
60
40
25°C
20
– 55°C
10
6
4
VCE = 10 V
2
0.02 0.04 0.06 0.1
0.2
0.4 0.6 1
2
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.02
MJD47 MJD50
VBE(sat) @ IC/IB = 5 V
VBE(on) @ VCE = 4 V
TJ = 25°C
VCE(sat) @ IC/IB = 5 V
0.04 0.06 0.1
0.2
0.4 0.6 1
2
IC, COLLECTOR CURRENT (AMPS)
Figure 4. “On” Voltages
1
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.01
0.03 _{SINGLE PULSE}
0.02
0.01
0.01 0.02 0.03 0.05 0.1
R_θJC(t) = r(t) R_θJC
R_θJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θ_JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1
2 3 5 10 20 30 50
t, TIME (ms)
Figure 5. Thermal Response
100 200 300 500 1 k
5
2
1
1 ms
0.5
TC ≤ 25°C
0.2
500 µs ^{100 µs}
dc
0.1
0.05
0.02
0.01
0.005
5
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25°C
WIRE BOND LIMIT
CURVES APPLY BELOW
RATED VCEO
MJD47
MJD50
10
20
50
100 200 300 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
Motorola Bipolar Power Transistor Device Data
3