BUV48 Datasheet, PDF (3/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,400-450V,150W)

DC CHARACTERISTICS
BUV48 BUV48A
50
90%
30
20
10%
10
7
5
3
2
VCE = 5 V
1
1
23
5
8 10
20 30
50
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
10
5
3
7.5 A 10 A 15 A
IC = 5 A
1
0.5
0.3
TC = 25°C
0.1
0.1
0.3 0.5
1
23
4
IB, BASE CURRENT (AMPS)
Figure 2. Collector Saturation Region
5
β_f = 5
3
2
1
0.7
0.5
0.3
0.2
90%
10%
0.1
1
23
5 7 10
20 30 50
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Voltage
β_f = 5
2
1
0.7
0.5
0.3
TJ = 25°C
TJ = 100°C
0.1
0.3
1
3
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base–Emitter Voltage
104
VCE = 250 V
103
10 k
Cib
TJ = 150°C
1k
102
125°C
101 ^100°C REVERSE
75°C
100
FORWARD
100
Cob
25°C
10–1
– 0.4
– 0.2
0
0.2
0.4
0.6
TJ = 25°C
10
1
10
100
1000
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3