BUV20 Datasheet, PDF (3/4 Pages) Motorola, Inc – 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS

100
50
10
1
1
10
100 125
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 2. Active Region Safe Operating Area
2.0
IC/IB = 10
1.6
1.2
VBE(sat)
0.8
VCE(sat)
0.4
0
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
BUV20
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TC = 25_C. TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by second breakdown.
100
80
60
40
20
0
100
VCE = 4 V
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. DC Current Gain
VCC = 30 V
IC/IB1 = 10
3.0
IB1 = IB2
2.0
1.0
tS
0.4
ton
0.3
0.2
tF
0
10
20
30
40
50
IC, COLLECTOR CURRENT (A)
Figure 5. Resistive Switching Performance
VCC
RC
IB2
IB1
104 µF
VCC = 30 V
RC = 0.6 Ω
RC — Non inductive resistance
Figure 6. Switching Times Test Circuit
Motorola Bipolar Power Transistor Device Data
3