BU323AP Datasheet, PDF (3/6 Pages) Motorola, Inc – DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

2000
1000
700
500
300
200
100
70
50
30
20
0.1
TJ = 150°C
25°C
VCE = 3 Vdc
VCE = 6 Vdc
0.2 0.3 0.5 0.7 1
23
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
5 7 10
BU323AP
3
TJ = 25°C
2.5
2
10 A
1.5
6
1
IC = 0.5 A ³
0.5
0.002 0.005 0.01 0.02 0.05 0.1 0.2
0.5 1 2
IB, BASE CURRENT (AMP)
Figure 4. Collector Saturation Region
1.7
1.6
IC/IB = 50
1.5
TJ = 25°C
1.4
1.3
2.2
2.1 TJ = 25°C
2.0
1.9
1.8
TJ = – 40°C
1.2
1.7
1.1
1.6
1.0
1.5
0.9
1.4
0.8
TJ = – 40°C
1.3
0.7
1.2
0.6
0.5
0.1
0.2
0.5
1.0
2.0
1.1
1.0
5.0
10
0.1
0.2
0.5
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 5. Collector–Emitter Saturation Voltage
Figure 6. Base–Emitter Voltage
10
7
ts
5
3
2
tf
1
0.7
0.5
TJ = 25°C
IC/IB = 20
0.3
VCE = 12 Vdc
0.2
0.1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 7. Turn–Off Switching Time
104
VCE = 250 Vdc
103
TJ = 150°C
102
IC = ICES
101 ^75°C
100 _25°C
10 ^{–1 REVERSE}
– 0.2
0
FORWARD
+ 0.2
+ 0.4
+ 0.6
+ 0.8
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 8. Collector Cutoff Region
Motorola Bipolar Power Transistor Device Data
3–3