BDX53B Datasheet, PDF (3/6 Pages) Motorola, Inc – Plastic Medium-Power Complementary Silicon Transistors

BDX53B BDX53C BDX54B BDX54C
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5
P(pk)
t1
t2
SINGLE
PULSE
DUTY CYCLE, D = t1/t2
R_θJC(t) = r(t) R_θJC
R_θJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R_θJC(t)
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 4. Thermal Response
20
100 µs
10
500 µs
5.0
5.0 ms
2.0
1.0 ms
TJ = 150°C
dc
1.0
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
0.1 ^{CURVES APPLY BELOW RATED VCEO}
0.05
0.02
1.0
BDX53B, BDX54B
BDX53C, BDX54C
2.0 3.0 5.0 7.0 10
20 30 50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC –VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
tlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
PNP
NPN
2.0 5.0 10 20
50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 6. Small-Signal Current Gain
300
TJ = + 25°C
200
100
70
50
30
0.1 0.2
Cob
Cib
PNP
NPN
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
Motorola Bipolar Power Transistor Device Data
3