BDV65B Datasheet, PDF (3/6 Pages) Motorola, Inc – Complementary Silicon Plastic Power Darlingtons

NPN
VCE = 4 V
10K
1K
4
0.1
10
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
BDV65B BDV64B
PNP
10K
1K
1
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
10
1
VBE(sat) @ IC/IB = 250
1
VBE(sat) @ IC/IB = 250
0.1
0.1
0.1
1
10
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 4. “On” Voltages
Figure 5. “On” Voltages
100
50
100 µs
20
5.0 ms ^{1.0 ms}
10
dc
5
v ^{SECONDARY BREAKDOWN}
LIMITED @ TJ 150°C
1
THERMAL LIMIT @ TC = 25°C
BONDING WIRE LIMIT
BDV65B, BDV64B
1
10
30 50
100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
Figure 6. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C, TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 7. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
Motorola Bipolar Power Transistor Device Data
3