BD438 Datasheet, PDF (3/4 Pages) Motorola, Inc – Plastic Medium Power Silicon PNP Transistor

2.0
1.6
IC = 10 mA
1.2
100 mA
BD438 BD440 BD442
1.0 A
3.0 A
0.8
TJ = 25°C
0.4
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 1. Collector Saturation Region
50 70 100
200 300 500
200
100
80
60
40
20
0
10
2
3
100
1
5
IC, COLLECTOR CURRENT (AMP)
Figure 2. Current Gain
2.0
TJ = 25°C
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 3. “On” Voltage
10
4.0
5 ms
TJ = 150°C
dc
SECONDARY BREAKDOWN
1.0
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMIT
0.5 _{CURVES APPLY BELOW RATED VCEO}
BD438
BD440
0.1
1.0 2.0
BD442
5.0
10
20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Active Region Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3