BD437 Datasheet, PDF (3/4 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

2.0
1.6
IC = 10 A
1.2
100 mA
BD437 BD441
1.0 A
3.0 A
0.8
TJ = 25°C
0.4
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 1. Collector Saturation Region
50 70 100
200 300 500
200
180
160
140
120
100
80
60
40
20
0
0.01
0.02 0.03 0.05
BD433, 435, 437
BD439, 441
0.1
0.2 0.3
0.5
1
IC, COLLECTOR CURRENT (AMP)
Figure 2. Current Gain
2
3
5
2.0
TJ = 25°C
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.6
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Figure 3. “On” Voltage
10
4.0
5 ms
TJ = 150°C
dc
1.0
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
0.5
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
BD437
0.1
1.0 2.0
BD441
5.0
10
20
50
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Active Region Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3