TIP31A Datasheet, PDF (2/6 Pages) Motorola, Inc – POWER TRANSISTORS COMPLEMENTARY SILICON

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 30 mAdc, IB = 0)}
VCEO(sus)
TIP31A, TIP32A
60
TIP31B, TIP32B
80
TIP31C, TIP32C
100
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCE = 60 Vdc, IB = 0)}
TIP31A, TIP32A
ICEO
—
TIP31B, TIP31C
—
TIP32B, TIP32C
—
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCE = 60 Vdc, VEB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCE = 80 Vdc, VEB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(VCE = 100 Vdc, VEB = 0)}
ICES
TIP31A, TIP32A
—
TIP31B, TIP32B
—
TIP31C, TIP32C
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
IEBO
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)}
DYNAMIC CHARACTERISTICS
hFE
25
10
VCE(sat)
—
VBE(on)
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)}
fT
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v v Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
hfe
20
Max
Unit
Vdc
—
—
—
0.3
mAdc
0.3
0.3
µAdc
200
200
200
1.0
mAdc
—
—
50
1.2
Vdc
1.8
Vdc
—
MHz
—
—
TC TA
40 4.0
30 3.0
TC
20 2.0
10 1.0
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
TURN–ON PULSE
APPROX
VCC
+11 V
RC
Vin 0
VEB(off)
APPROX
+11 V
Vin
Vin
RB
t1
t3
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
– 4.0 V
2.0
1.0
SCOPE
0.7
0.5
0.3
0.1
0.07
0.05
tr @ VCC = 30 V
tr @ VCC = 10 V
IC/IB = 10
TJ = 25°C
td @ VEB(off) = 2.0 V
t2
TURN–OFF PULSE
DUTY CYCLE ≈ 2.0%
APPROX – 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
0.03
0.02
0.03 0.05 0.07 0.1
0.3 0.5 0.7 1.0
3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
3–2
Motorola Bipolar Power Transistor Device Data