TIP29B Datasheet, PDF (2/4 Pages) Motorola, Inc – 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS

TIP29B TIP29C TIP30B TIP30C
500
300
TJ = 150°C
25°C
100
70
– 55°C
50
30
VCE = 2.0 V
10
7.0
5.0
0.03 0.05 0.07 0.1
0.3 0.5 0.7 1.0
3.0
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
3.0
2.0
ts′
1.0
0.7
tf @ VCC = 30 V
0.5
0.3 tf @ VCC = 10 V
0.2
IB1 = IB2
IC/IB = 10
ts′ = ts – 1/8 tf
TJ = 25°C
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. Turn–Off Time
2.0 3.0
TURN–ON PULSE
APPROX
VCC
+11 V
RC
Vin 0
VEB(off)
APPROX
+11 V
Vin
Vin
RB
t1
t3
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
– 4.0 V
SCOPE
t2
TURN–OFF PULSE
DUTY CYCLE ≈ 2.0%
APPROX – 9.0 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
Figure 3. Switching Time Equivalent Circuit
2.0
1.0
0.7
tr @ VCC = 30 V
0.5
0.3
tr @ VCC = 10 V
IC/IB = 10
TJ = 25°C
0.1
0.07
td @ VEB(off) = 2.0 V
0.05
0.03
0.02
0.03 0.05 0.07 0.1
0.3 0.5 0.7 1.0
3.0
IC, COLLECTOR CURRENT (AMP)
Figure 4. Turn–On Time
10
TJ = 150°C
3.0
1 ms
dc
0.1
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
5 ms
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED VCEO
TIP29B, 30B
TIP29C, 30C
0.1
1.0
4.0
10
20
40
100
VCE, COLLECTOR–EMITTER VOLTAGE, (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE opera-
tion; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2
Motorola Bipolar Power Transistor Device Data