PZT2222AT1 Datasheet, PDF (2/6 Pages) Motorola, Inc – SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

PZT2222AT1
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (continued)
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = – 55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base-Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Input Impedance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small-Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 10 Vdc, IC = 100 µAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
°hie°
hre
ť hfe ť
°hoe°
F
Current-Gain — Bandwidth Product
fT
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
Cc
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
Ce
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING TIMES (TA = 25°C)
Delay Time
(VCC = 30 Vdc, IC = 150 mAdc,
td
Rise Time
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Figure 1
tr
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
IB(on) = IB(off) = 15 mAdc)
Fall Time
Figure 2
tf
Min
Max
Unit
—
10
nAdc
—
10
µAdc
—
35
—
50
—
70
—
35
—
100
300
50
—
40
—
Vdc
—
0.3
—
1.0
Vdc
0.6
1.2
—
2.0
kΩ
2.0
8.0
0.25
1.25
—
—
8.0x10-4
—
4.0x10-4
—
50
300
75
375
µmhos
5.0
35
25
200
—
4.0
dB
300
—
MHz
—
8.0
pF
—
25
pF
—
10
ns
—
25
—
225
ns
—
60
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data