MUN5111DW1T1 Datasheet, PDF (2/12 Pages) Motorola, Inc – Dual Bias Resistor Transistors

MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = –50 V, IE = 0)
ICBO
—
—
Collector–Emitter Cutoff Current (VCE = – 50 V, IB = 0)
ICEO
—
—
Emitter–Base Cutoff Current
(VEB = – 6.0 V, IC = 0)
MUN5111DW1T1
IEBO
—
—
MUN5112DW1T1
—
—
MUN5113DW1T1
—
—
MUN5114DW1T1
—
—
MUN5115DW1T1
—
—
MUN5116DW1T1
—
—
MUN5130DW1T1
—
—
MUN5131DW1T1
—
—
MUN5132DW1T1
—
—
MUN5133DW1T1
—
—
MUN5134DW1T1
—
—
MUN5135DW1T1
—
—
Collector–Base Breakdown Voltage (IC = –10 µA, IE = 0)
V(BR)CBO
– 50
—
Collector–Emitter Breakdown Voltage(3) (IC = – 2.0 mA, IB = 0)
V(BR)CEO
–50
—
ON CHARACTERISTICS(3)
DC Current Gain
(VCE = –10 V, IC = – 5.0 mA)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
hFE
35
60
60
100
80
140
80
140
160
250
160
250
3.0
5.0
8.0
15
15
27
80
140
80
130
80
140
Collector–Emitter Saturation Voltage (IC = –10 mA, IE = –0.3 mA)
VCE(sat)
—
—
(IC = –10 mA, IB = – 5 mA) MUN5130DW1T1/MUN5131DW1T1
(IC = –10 mA, IB = –1 mA) MUN5115DW1T1/MUN5116DW1T1/
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
Output Voltage (on)
VOL
(VCC = –5.0 V, VB = –2.5 V, RL = 1.0 kΩ) MUN5111DW1T1
—
—
MUN5112DW1T1
—
—
MUN5114DW1T1
—
—
MUN5115DW1T1
—
—
MUN5116DW1T1
—
—
MUN5130DW1T1
—
—
MUN5131DW1T1
—
—
MUN5132DW1T1
—
—
MUN5133DW1T1
—
—
MUN5134DW1T1
—
—
MUN5135DW1T1
—
—
(VCC = –5.0 V, VB = – 3.5 V, RL = 1.0 kΩ) MUN5113DW1T1
—
—
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Max
–100
–500
–0.5
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 0.25
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
–0.2
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data