MTP30P06V Datasheet, PDF (2/8 Pages) Motorola, Inc – TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

MTP30P06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
Vdc
—
62
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
—
—
10
—
—
100
—
—
100
nAdc
VGS(th)
2.0
2.6
4.0
Vdc
—
5.3
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 30 Adc)
(VGS = 10 Vdc, ID = 15 Adc, TJ = 150°C)
Forward Transconductance
(VDS = 8.3 Vdc, ID = 15 Adc)
RDS(on)
VDS(on)
gFS
—
0.067
0.08
Ohm
Vdc
—
2.0
2.9
—
—
2.8
5.0
7.9
Mhos
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
(VDD = 30 Vdc, ID = 30 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 48 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
1562
2190
pF
—
524
730
—
154
310
—
14.7
30
ns
—
25.9
50
—
98
200
—
52.4
100
—
54
80
nC
—
9.0
—
—
26
—
—
20
—
Vdc
—
2.3
3.0
—
1.9
—
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
—
175
—
ns
—
107
—
—
68
—
—
0.965
—
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
nH
—
3.5
—
4.5
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
—
7.5
—
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data