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MTP2N40E Datasheet, PDF (2/8 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM | |||
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MTP2N40E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainâSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
400
â
â
451
â
Vdc
â
mV/°C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateâBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IDSS
IGSS
µAdc
â
â
10
â
â
100
â
â
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
3.2
4.0
Vdc
â
7.0
â
mV/°C
Static DrainâSource OnâResistance (VGS = 10 Vdc, ID = 1.0 Adc)
DrainâSource OnâVoltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)
RDS(on)
â
3.1
3.5
Ohms
VDS(on)
Vdc
â
7.3
8.4
â
â
7.4
gFS
0.5
1.0
â
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
â
229
320
pF
â
34
40
â
7.3
10
SWITCHING CHARACTERISTICS (2)
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
Fall Time
Gate Charge
(VDD = 200 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 9.1 â¦)
(VDS = 320 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
â
8.0
16
ns
â
8.4
14
â
12
26
â
11
20
â
8.6
12
nC
â
2.6
â
â
3.2
â
â
5.0
â
SOURCEâDRAIN DIODE CHARACTERISTICS
Forward OnâVoltage
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
â
0.88
1.2
â
0.76
â
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
â
156
â
ns
â
99
â
â
57
â
â
0.89
â
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25â³ from package to center of die)
LD
nH
â
3.5
â
â
4.5
â
Internal Source Inductance
LS
(Measured from the source lead 0.25â³ from package to source bond pad)
â
7.5
â
nH
(1) Pulse Test: Pulse Width ⤠300 µs, Duty Cycle ⤠2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data
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