MTE125N20E Datasheet, PDF (2/8 Pages) Motorola, Inc – TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

MTE125N20E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
200
215
—
250
—
Vdc
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IDSS
IGSS
µAdc
—
—
10
—
—
100
—
—
200
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
4.0
Vdc
—
—
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 62.5 Adc)
Drain–Source On–Voltage (VGS = Vdc)
(ID = 125 Adc)
(ID = 62.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 62.5 Adc)
RDS(on)
—
VDS(on)
—
—
12
15
mOhm
Vdc
—
2.1
—
1.9
gFS
50
80
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
—
14400
—
pF
—
3600
—
—
920
—
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 250 Vdc, ID = 125 Adc,
VGS = 10 Vdc,
RG = 4.7 Ω)
(VDS = 160 Vdc, ID = 125 Adc,
VGS =10 Vdc)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
72
—
ns
—
574
—
—
327
—
—
376
—
—
510
—
nC
—
100
—
—
245
—
—
158
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 125 Adc, VGS = 0 Vdc)
(IS = 125 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Vdc
—
1.00
1.5
—
1.00
—
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 125 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
ta
tb
QRR
—
310
—
ns
—
220
—
—
90
—
—
9.2
—
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
nH
—
3.5
—
—
5.0
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
—
5.0
—
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data