MTD1N50E Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

MTD1N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
—
480
—
Vdc
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
—
—
10
—
—
100
—
—
100
nAdc
VGS(th)
2.0
3.2
4.0
Vdc
—
6.0
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = Vdc, ID = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 10 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 250 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
4.3
5.0
Ohm
Vdc
—
4.5
6.0
—
—
5.3
0.5
0.9
—
mhos
—
215
315
pF
—
30.2
42
—
6.7
12
—
8.0
20
ns
—
9.0
10
—
14
30
—
17
30
—
7.4
9.0
nC
—
1.6
—
—
3.8
—
—
5.0
—
Vdc
—
0.81
1.2
—
0.68
—
Reverse Recovery Time
(See Figure 14)
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
141
—
ns
—
82
—
—
58.5
—
—
0.65
—
µC
nH
—
3.5
—
—
4.5
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
—
7.5
—
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data