MTB1N100E Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS POWER FET 1.0 AMPERES 1000 VOLTS

MTB1N100E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
V(BR)DSS
IDSS
IGSS
1000
—
—
1.251
—
—
—
—
—
—
—
Vdc
—
mV/°C
µAdc
10
100
100 nAdc
VGS(th)
2.0
—
4.0
Vdc
—
6.0
—
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(VDD = 500 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
6.7
9.0
Ohm
Vdc
—
4.86
9.0
—
—
10.5
0.9
1.32
—
mhos
—
587
810
pF
—
59.6
120
—
12.2
25
—
9.0
20
ns
—
12
25
—
28
50
—
34
70
—
14.6
20
nC
—
2.8
—
—
6.8
—
—
5.2
—
Vdc
—
0.764
1.0
—
0.62
—
Reverse Recovery Time
(See Figure 14)
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
655
—
ns
—
42
—
—
613
—
—
0.957
—
µC
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data