MRF858 Datasheet, PDF (2/6 Pages) Motorola, Inc – NPN SILICON RF POWER TRANSISTOR

ELECTRICAL CHARACTERISTICS — continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz,
Power Output = 3.6 W)
Load Mismatch
(Po = 3.6 W)
(VCE = 24 V, IC = 0.5 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.5 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.5 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.5 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz,
Power Output = 3.6 W)
Symbol
Min
Typ
Max
Unit
hFE
30
60
120
—
Cob
—
6.5
8
pF
Pg
ψ
Pin(over)
ITO
11
12
—
No Degradation in
Output Power
—
—
0.85
+ 44.5
+ 45.5
—
dB
W
dBm
NF
—
6
—
dB
IRL
—
– 12
–9
dB
VCE
(V)
24
IC
f
(A) (MHz)
0.5
800
820
840
860
880
900
920
940
960
Table 1. MRF858 Common Emitter S–Parameters
S11
|S11|
∠φ
0.942
167
0.942
166
0.941
166
0.940
166
0.941
165
0.940
165
0.940
165
0.940
164
0.940
164
S21
|S21|
∠φ
1.493
50
1.453
50
1.415
49
1.379
48
1.351
47
1.320
46
1.289
45
1.252
44
1.222
43
S12
|S12|
∠φ
0.027
58
0.027
58
0.028
59
0.028
59
0.029
59
0.030
59
0.030
59
0.031
59
0.031
59
S22
|S22|
∠φ
0.538
0.541
0.545
0.550
0.553
0.557
0.562
0.566
0.570
– 165
– 164
– 165
– 165
– 165
– 165
– 165
– 165
– 165
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
Zin
(Ohms)
ZOL*
(Ohms)
840
1.1
2.9
9.9
– 14.4
870
1.1
3.5
9.5
– 14.6
900
1.2
3.5
9
– 14.5
VCE = 24 V, IC = 0.5 A, Po = 3.6 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF858 MRF858S
2
MOTOROLA RF DEVICE DATA