MRF842 Datasheet, PDF (2/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
10
—
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
45
65
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz)
Collector Efficiency
(Pout = 20 W, VCC = 12.5 Vdc, f = 870 MHz)
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin (3) = 6.0 W, f = 870 MHz,
VSWR = 20:1, all phase angles)
GPB
η
—
6.0
7.0
—
dB
50
55
—
%
No Degradation in Output Power
NOTE:
3. Pin = 150% of the typical input power requirement for 20 W output power @ 12.5 Vdc.
L1
L4
C4
C10
B
SOCKET
B
SOCKET
+12.5 Vdc
VRE
PORT
C2
+
C3
+
C12
C13
ÇÇÇÇÇÇ_TL1ÇÇÇ _C1^{ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ}_TL2^{ÇÇÇÇÇÇÇÇÇÇL2}
C5
D.U.T.
C7
ÇÇÇÇÇ^LÇÇÇÇdz ÇÇÇÇÇ_TL3ÇÇÇÇÇÇÇÇÇÇ_{CÇÇÇ11 ÇÇÇTL4ÇÇÇ}
C6
C8
C9
B — Ferrite Bead, Ferroxcube 56–590–65–3B
C1, C11 — 51 pF, 100 Mil Chip Capacitor
C2, C13 — 15 µF, 20 WV Tantalum
C3, C12 — 1000 pF Unelco J101
C4, C10 — 91 pF Mini–Underwood
C5 — 15 pF Mini–Underwood
C6 — 12 pF Mini–Underwood
C7, C8 — 21 pF Mini–Underwood
C9 — 11 pF Mini–Underwood
L1, L4 — 11 Turns #20 AWG Over 10 ohm 1/2 W Carbon
L2, L3 — 4 Turns #20 AWG, 200 Mil ID
TL1, TL4 — Micro Strip, Zo = 50 Ω
TL2 — Micro Strip, Zo = 38 Ω, λ/4 @ 838 MHz
TL3 — Micro Strip, Zo = 24 Ω, λ/4 @ 838 MHz
Board — 0.032″ Glass Teflon
Board — 2 oz. Cu CLAD, ε_r = 2.55
Figure 1. 870 MHz Test Circuit Schematic
MRF842
2
MOTOROLA RF DEVICE DATA