MRF840 Datasheet, PDF (2/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
10
—
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
24
35
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz)
Collector Efficiency
(Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz)
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 3.0 W, (3) f = 870 MHz,
VSWR = 20:1, all phase angles)
GPE
η
—
6.0
7.0
—
dB
50
55
—
%
No Degradation in Output Power
NOTE:
3. Pin = 150% of the typical input power requirement for 10 W output power @ 12.5 Vdc.
SHORTING
PLUG
RF
INPUT
L1
C4
L6
C9
C2
C3
L2
SOCKET
SOCKET
L5
C10
C11
ÇÇÇÇÇÇÇÇÇÇÇÇ_C1 ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ^L3
T1
T2
C5
C7
D.U.T.
ÇÇÇÇ^LÇÇÇÇ⁴ ÇÇÇÇÇÇÇÇÇÇÇÇ_C12 ÇÇÇÇÇÇÇÇÇÇÇÇ
RF
OUTPUT
T3
T4
C6
C8
L7
C1, C12 — 50 pF, 100 Mil Chip Capacitor
C2, C11 — 15 µF, 20 V Tantalum
C3, C10 — 1000 pF, 350 V UNELCO
C4, C9 — 91 pF Mini–Underwood
C5 — 15 pF
C6 — 15 pF
C7 — 15 pF
C8 — 15 pF
L1, L6 — 11 Turns 20 AWG Around 10 Ω 1/2 W Resistor
L2, L5 — Ferrite Bead
L3, L4 — 4 Turn 20 AWG 0.2″ I.D.
T1, T4 — ZO = 50 Ω
T2 — ZO = 30 Ω ȏ = λ/4 @ 838 MHz
T3 — ZO = 13.5 Ω ȏ= λ/4 @ 838 MHz
L7 — 18 AWG Wire Loop
0.25″
0.5″
Figure 1. 870 MHz Test Circuit
MRF840
2
MOTOROLA RF DEVICE DATA